Please use this identifier to cite or link to this item:
Title: Ferroelectric behaviors and charge carriers in Nd-doped Bi 4Ti 3O 12 thin films
Authors: Gao, X.S. 
Xue, J.M. 
Wang, J. 
Issue Date: 1-Feb-2005
Citation: Gao, X.S., Xue, J.M., Wang, J. (2005-02-01). Ferroelectric behaviors and charge carriers in Nd-doped Bi 4Ti 3O 12 thin films. Journal of Applied Physics 97 (3) : -. ScholarBank@NUS Repository.
Abstract: Nd-doped Bi 4Ti 3O 12 thin films, (Bi 3.25Nd 0.85) 4Ti 3O 12, of layered perovskite structure were synthesized by if sputtering, followed by postannealing at 600-700°C. They show enhanced ferroelectricity with rising postannealing temperature in the range of 650-750°C. When annealed at 700°C, a remanent polarization 2P r of 25.2 μC/cm 2 and a coercive field E C of 87.2 kV/cm were measured at 9 V, together with an almost fatigue-free behavior up to 1.4 × 10 10 switching cycles. Their ferroelectric, dielectric, and ac conductivity properties over the temperature range from 25 to 300°C were studied over the frequency range of 0.1-1 MHz. Space-charge relaxation by oxygen vacancies was shown to play an important role in determining the dielectric and conductivity behaviors of Nd-doped Bi 4Ti 3O 12 thin films. © 2005 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.1834986
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 12, 2022


checked on Jan 12, 2022

Page view(s)

checked on Jan 13, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.