Please use this identifier to cite or link to this item: https://doi.org/10.1111/j.1551-2916.2005.00499.x
Title: Ferroelectric and dielectric properties of Pb(Mg1/3Ta 2/3)0.7Ti0.3O3 thin films derived from RF magnetron sputtering
Authors: Li, F.
Xue, J. 
Wang, J. 
Issue Date: Oct-2005
Citation: Li, F., Xue, J., Wang, J. (2005-10). Ferroelectric and dielectric properties of Pb(Mg1/3Ta 2/3)0.7Ti0.3O3 thin films derived from RF magnetron sputtering. Journal of the American Ceramic Society 88 (10) : 2769-2774. ScholarBank@NUS Repository. https://doi.org/10.1111/j.1551-2916.2005.00499.x
Abstract: Pb(Mg1/3Ta2/3)0.7Ti0.3O 3 thin films of single perovskite phase were successfully synthesized by using the RF sputtering deposition technique, followed by post-thermal annealing. While the perovskite structure of Pb(Mg1/3Ta 2/3)0.7Ti0.3O3 is rather unstable, phase evolution in the thin films was manipulated by controlling both working pressure during the sputtering process and post-thermal annealing temperature. The desirable perovskite phase was promoted by increasing the working pressure in the range of 10-25 mTorr, followed by thermal annealing at 600°C. The ferroelectric, dielectric, and polarization behaviors of Pb(Mg 1/3Ta2/3)0.7Ti0.3O3 films were characterized over a wide range of frequencies. They are strongly affected by the film thickness, where the relative permittivity and remanent polarization increase, while the coercive field decreases with increasing film thickness in the range of 115-360 nm. © 2005 The American Ceramic Society.
Source Title: Journal of the American Ceramic Society
URI: http://scholarbank.nus.edu.sg/handle/10635/107039
ISSN: 00027820
DOI: 10.1111/j.1551-2916.2005.00499.x
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