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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1719268
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dc.titleEvidence of nitric-oxide-induced surface band bending of indium tin oxide
dc.contributor.authorHu, J.
dc.contributor.authorPan, J.
dc.contributor.authorZhu, F.
dc.contributor.authorGong, H.
dc.date.accessioned2014-10-29T08:38:32Z
dc.date.available2014-10-29T08:38:32Z
dc.date.issued2004-06-01
dc.identifier.citationHu, J., Pan, J., Zhu, F., Gong, H. (2004-06-01). Evidence of nitric-oxide-induced surface band bending of indium tin oxide. Journal of Applied Physics 95 (11 I) : 6273-6276. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1719268
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107033
dc.description.abstractThe surface electronic properties of nitric oxide (NO)-treated indium tin oxide (ITO) were examined in situ by a four-point probe and x-ray photoelectron spectroscopy (XPS). It was found that the NO adsorption induced an increase in ITO sheet resistance. A 15 nm thick ITO film was deposited on glass substrate at room temperature by radio frequency magnetron sputtering. XPS analysis shows that molecularly-adsorbed NO resulted a 0.2 eV shift in its VBM edge to a low binding energy.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1719268
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1063/1.1719268
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume95
dc.description.issue11 I
dc.description.page6273-6276
dc.description.codenJAPIA
dc.identifier.isiut000221657300046
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