Study of surface microtopography of InAlAs/InP heterostructures grown by MBE
Taijing, L. Zhenhoug, M. Chao, J. Sekiguchi, T. Ong, C.K. Ogawa, T. Ming, Z.J. Sumino, K.
Zhenhoug, M.
Chao, J.
Sekiguchi, T.
Ogawa, T.
Ming, Z.J.
Sumino, K.
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Abstract
This paper reports the results of surface microtopographic study on InAlAs/InP heterostructures. There are many precipitates enriched in In on the as-grown InAlAs surface and when the size of the precipitates is larger than a critical size of 10 μm, they act as growth centers to form an eccentric multi-monomolecular growth spiral on the (100) face. © 1994.
Keywords
A: thin films, B: epitaxy, C: impurities in semiconductors
Source Title
Solid State Communications
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Series/Report No.
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Date
1994-12
DOI
Type
Article