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A novel approach for doping impurity in thin film insitu by dual-beam pulsed-laser deposition

Ong, C.K.Xu, S.Y.
Zhou, W.Z.
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Abstract
Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique that allows insitu controlling doping under a wide range of conditions. We demonstrated doping Ag insitu in YBa2Cu3O7-δ thin films and for the first time observed long bar-like Ag structures with a length up to 150 μm in the as-deposited films, which may have important application in the fabrication of superconductor-normal metal-superconductor Josephson junctions. © 1998 American Institute of Physics.
Keywords
Source Title
Review of Scientific Instruments
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Series/Report No.
Organizational Units
Organizational Unit
PHYSICS
dept
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Date
1998
DOI
10.1063/1.1149168
Type
Article
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