Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization
Liow, T.-Y. ; Ang, K.-W. ; Fang, Q. ; Song, J.-F. ; Xiong, Y.-Z. ; Yu, M.-B. ; Lo, G.-Q. ;
Liow, T.-Y.
Ang, K.-W.
Fang, Q.
Song, J.-F.
Xiong, Y.-Z.
Yu, M.-B.
Lo, G.-Q.
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Abstract
Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (VπLπ = 2.56 Vcm, 10 Gb/s). Low-voltage operation (VRF = 1Vpp) was also demonstrated. Introducing a low-thermal-budget postepitaxy anneal improves the performance of the Ge photodetectors, thus resulting in significantly improved dark current. The responsivity and speed in the low-voltage regime are also enhanced, which enhances low-voltage or even short-circuit (VBias = 0 V) operation. © 2006 IEEE.
Keywords
Germanium photodetector, Monolithic integration, Silicon modulator, Silicon photonics
Source Title
IEEE Journal on Selected Topics in Quantum Electronics
Publisher
Series/Report No.
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Date
2010-01
DOI
10.1109/JSTQE.2009.2028657
Type
Article