Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells
Dixit, V. Liu, H.F. Xiang, N.
Dixit, V.
Liu, H.F.
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Abstract
A kinetic model has been developed to study the effect of nitrogen on indium segregation for GaInNAs/GaAs quantum wells. Our results suggest that nitrogen tends to enhance the indium-gallium exchange process. The incorporation of nitrogen is found to increases the segregation length up to a maximum value, which decreases with further increase in nitrogen concentration.
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2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
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Date
2008
DOI
10.1109/IPGC.2008.4781311
Type
Conference Paper