Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry
Chan, T.K. Fang, F. Markwitz, A. Osipowicz, T.
Fang, F.
Markwitz, A.
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Abstract
We present detailed observations of the solid phase epitaxy process in Sn-implanted Si samples with nanometric depth resolution within a 50 nm ultra-shallow region beneath the surface. Measurements were made using high-resolution Rutherford backscattering spectrometry coupled with the ion channeling technique. Samples with Sn ions implanted onto Si substrates with and without prior Si + self-amorphization implantation process show different crystal regrowth characteristics during annealing. Regrowth proceeds at a non-uniform rate up to a certain depth before stopping, and an Arrhenius-type defect density limiting model of crystal regrowth is proposed to account for this effect. © 2012 American Institute of Physics.
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Applied Physics Letters
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Date
2012-08-20
DOI
10.1063/1.4747487
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Article