Microstructural and photoluminescence studies of germanium nanocrystals in amorphous silicon oxide films
Choi, W.K. Ho, Y.W. Ng, S.P. Ng, V.
Ho, Y.W.
Ng, S.P.
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Abstract
Ge nanocrystal growth in amorphous silicon oxide film was studied using the transmission electron microscopy and x-ray photoelectron spectroscopy techniques. The as-sputtered sample contained mainly GeO2 and Ge suboxides. GeO2 and/or suboxides dissociate when rapid thermal annealed and provide Ge for nanocrystal formation. Nanocrystals of similar size (∼60 Å in diameter) were obtained when annealed at 800̊C. Nanocrystals with diameters of 200-280 Å consisting of multiple twin structures near the Si-SiO2 interface were observed when annealed at 1000°C. The [win structure was attributed to the enhanced diffusion of Ge at 1000°C and the short annealing time. Our photoluminescence (PL) results show that the best PL response was obtained with samples that exhibit uniform nanocrystal size. © 2001 American Institute of Physics.
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Journal of Applied Physics
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Date
2001-02-15
DOI
10.1063/1.1342026
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Article