High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules
Han, G. Su, S. Zhan, C. Zhou, Q. Yang, Y. Wang, L. Guo, P. Wei, W. Wong, C.P. Shen, Z.X.
Su, S.
Zhan, C.
Yang, Y.
Wang, L.
Guo, P.
Wei, W.
Wong, C.P.
Shen, Z.X.
Citations
Altmetric:
Alternative Title
Abstract
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a 180 °C GeSn MBE growth, sub-370 °C Si 2H 6 surface passivation and gate stack process for GeSn, and an implantless metallic NiGeSn S/D formed at 350 °C. A hole mobility of 430 cm 2/Vs is obtained for GeSn pMOSFETs, which is 66% higher than that of the Ge control pMOSFETs. GeSn pMOSFETs show a 64% lower S/D resistance as compared to the Ge control devices. © 2011 IEEE.
Keywords
Source Title
Technical Digest - International Electron Devices Meeting, IEDM
Publisher
Series/Report No.
Collections
Rights
Date
2011
DOI
10.1109/IEDM.2011.6131569
Type
Conference Paper