Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study
Toh, C.P. Ong, C.K.
Toh, C.P.
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Abstract
The authors use a modified form of the Stillinger-Weber potential to obtain the binding energy and geometry of a number of Si ad-dimer structures on the fully relaxed Si(001) 2*1 surface by canonical Monte Carlo simulation. At low temperatures they show the possible existence of two kinds of 'defect' ad-dimers which may hinder normal 1*2 growth. The mechanisms for both diffusion and interconversion of such dimers are then elucidated by examining their associated minimum-energy paths.
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Source Title
Journal of Physics: Condensed Matter
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Date
1993
DOI
10.1088/0953-8984/5/5/006
Type
Article