Two-dimensional multibit optoelectronic memory with broadband spectrum distinction
Xiang D. Liu T. Xu J. Tan J.Y. Hu Z. Lei B. Zheng Y. Wu J. Neto A.H.C. Liu L.
Xu J.
Lei B.
Zheng Y.
Wu J.
Neto A.H.C.
Liu L.
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Abstract
Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 10 6 , which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 10 4 s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory. © 2018, The Author(s).
Keywords
boron, boron nitride, phosphorus, tungsten, tungsten diselenide, unclassified drug, memory, model validation, pixel, research work, semiconductor industry, spectrum, two-dimensional modeling, Article, chemical structure, color, illumination, image analysis, information processing, memory, molecular dynamics, multibit nonvolatile optoelectronic memory, retention time, structure analysis
Source Title
Nature Communications
Publisher
Nature Publishing Group
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Date
2018
DOI
10.1038/s41467-018-05397-w
Type
Article