Improved retention and cycling characteristics of MONOS memory using charge-trapping engineering
Chin, A. Lin, S.H. Yang, H.J. Tsai, C.Y. Yeh, F.S. Liao, C.C.
Chin, A.
Lin, S.H.
Yang, H.J.
Tsai, C.Y.
Yeh, F.S.
Liao, C.C.
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Abstract
The shallow trap energy in SONOS Charge-Trapping Flash (CTF) is the fundamental challenge for required good retention, especially at elevated temperatures. Although the high temperature retention can be improved by BE-SONOS, this is traded off the slow erase speed. To address these issues, we have fabricated a new Charge-Trapping-Engineered Flash (CTEF) using deep trapping high- dielectric to replace Si3N4. At l500C, the CTEF device shows a large 5.6 V initial memory window and a 3.8 V 10-year extrapolated retention for 4-bits/cell MLC, under very fast 100 sand ±16 V program/erase condition. © 2009 IEEE.
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Source Title
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
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Date
2009
DOI
10.1109/IPFA.2009.5232561
Type
Conference Paper