Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
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Abstract
Hot carrier immunity of LDD buried-channel p-MOSFET's is severely degraded following tungsten polycidation of device gate and incorporation of F in the oxide, in contrast to the reliability enhancement commonly observed for n-MOSFET's. Possible mechanisms involving enhanced trapping at F-related oxide bulk traps and reduced field-induced detrapping rate are discussed. The reduction in hot-carrier reliability of WSix gate p-MOSFET's may raise concern over the use of WF6-based tungsten polycide technology in deep submicrometer CMOS circuits.
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Source Title
Japanese Journal of Applied Physics, Part 2: Letters
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Date
1996-12-01
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Article