Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current
Chim, W.K. Tan, Y.N.
Tan, Y.N.
Citations
Altmetric:
Alternative Title
Abstract
The trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing were modeled. The stress-induced leakage current (SILC) was used for the modeling purpose. It was found that when the time between pulses of a periodic ac-pulse stress wave form increases, SILC decreases. The amount of traps generated during write/erase endurance stress of a floating-gate tunnel oxide electrically erasable and programmable read-only memory were also calculated using this model. Results showed that the measured and calculated trap concentrations were in good agreement.
Keywords
Source Title
Journal of Applied Physics
Publisher
Series/Report No.
Collections
Rights
Date
2002-12-01
DOI
10.1063/1.1516266
Type
Article