Perpendicularizing magnetic anisotropy of full-Heusler Co2 FeAl films by cosputtering with terbium
Li, X.Q. Xu, X.G. Zhang, D.L. Miao, J. Zhan, Q. Jalil, M.B.A. Yu, G.H. Jiang, Y.
Li, X.Q.
Xu, X.G.
Zhang, D.L.
Miao, J.
Zhan, Q.
Yu, G.H.
Jiang, Y.
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Abstract
In this letter, we fabricated Co2 FeAl films with perpendicular-to-plane magnetic anisotropy by cosputtering with terbium (Tb). The as-prepared (Tb+ Co2 FeAl) films (TCFA) consists of nanocrystalline L 21 Co2 FeAl and amorphous alloy of Tb(Co, Fe, and Al). The coercivity field (Hc) of the TCFA films is adjustable from 200 to 800 Oe. After annealing, the Hc decreases to 70 Oe. A perpendicularly magnetized spin valve with the TCFA films as free and reference layers shows a current-perpendicular-to-plane magnetoresistance of 1.8% at room temperature. Our result opens a way to fabricate perpendicularly magnetized full-Heusler alloys and makes it possible to realize faster and simple structured magnetic storage bits in the future. © 2010 American Institute of Physics.
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Applied Physics Letters
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Date
2010
DOI
10.1063/1.3380754
Type
Article