Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
Wei, G. Liang, Y.C. Samudra, G.S.
Wei, G.
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Abstract
This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC/GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others. © 2011 IEEE.
Keywords
High voltage p-n junction, SiC/GaN diode simulation, WBG power semiconductor
Source Title
8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia
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Date
2011
DOI
10.1109/ICPE.2011.5944472
Type
Conference Paper