Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealing
Ong, K.K. Pey, K.L. Lee, P.S. Wee, A.T.S. Wang, X.C. Wong, L.H.
Ong, K.K.
Pey, K.L.
Lee, P.S.
Wang, X.C.
Wong, L.H.
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Abstract
Strained-Si/SiGe substrate comprises a thermally less conductive SiGe layer, which deprives a good thermal dissipation pathway. This gives rise to a highly non-equilibrium laser process and can vary significantly to that in normal bulk silicon substrate. Our results show that the boron distribution in strained-Si/SiGe substrate is always deeper and more abrupt than that in bulk silicon substrate, signifying a substantial thermal confinement that leads to a greater melt extent and melting duration. It is found that a decrease of over 94% thermal transfer rate occurs in the strained-Si/SiGe substrate. Non-melt laser annealing, on the other hand, produces dopant profiles of negligible diffusion and improves activation in the strained-Si/SiGe substrates. No degradation in the strain in the strained-Si layer was induced after non-melt laser annealing. The study demonstrates that non-melt laser annealing in thermally less conductive semiconductor substrates is capable of enhancing dopant activation at low laser fluence. copyright The Electrochemical Society.
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ECS Transactions
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Date
2006
DOI
10.1149/1.2209374
Type
Conference Paper