Effective method for preparation of oxide-free Ge2Sb 2Te5 surface: An X-ray photoelectron spectroscopy study
Zhang, Z. Pan, J. Foo, Y.L. Fang, L.W.-W. Yeo, Y.-C. Zhao, R. Shi, L. Chong, T.-C.
Zhang, Z.
Pan, J.
Foo, Y.L.
Fang, L.W.-W.
Zhao, R.
Shi, L.
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Alternative Title
Abstract
Cleaning the surfaces of the as-deposited Ge2Sb 2Te5 was studied by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). The mixed native oxides on the as-deposited Ge2Sb2Te5 surface can be easily removed by dipping Ge2Sb2Te 5 in de-ionized water for 1 min, while the surface morphology remains unchanged after cleaning. Native oxides only re-grow after exposure to air for more than 4 min. Although dipping in water leads to a surface layer deficient in Ge and Sb, the surface composition of Ge2Sb2Te 5 can recover to its stoichiometric value after annealing at 200 °C in vacuum. The phase remains amorphous at room temperature after dipping in water, and changes to fcc and hcp after annealing at 100 and 220 °C, respectively. © 2010 Elsevier B.V.
Keywords
Ge2Sb2Te 5, Phase change, Surface cleaning, XPS
Source Title
Applied Surface Science
Publisher
Series/Report No.
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Date
2010-10-01
DOI
10.1016/j.apsusc.2010.06.039
Type
Article