Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
Zhang, X. Guo, H. Lin, H.-Y. Cheng, C.-C. Ko, C.-H. Wann, C.H. Luo, G.-L. Chang, C.-Y. Chien, C.-H. Han, Z.-Y.
Zhang, X.
Guo, H.
Lin, H.-Y.
Cheng, C.-C.
Ko, C.-H.
Wann, C.H.
Luo, G.-L.
Chang, C.-Y.
Chien, C.-H.
Han, Z.-Y.
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Abstract
The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρ e) of 1.57 mm and sheet resistance (Rsh) of 2.8/ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs. © 2011 American Vacuum Society.
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Source Title
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Series/Report No.
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Date
2011-05
DOI
10.1116/1.3592211
Type
Article