Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
Xia, M Cheng, Z Han, J Zheng, M Sow, C.-H Thong, J.T.L Zhang, S Li, B
Cheng, Z
Han, J
Zhang, S
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Abstract
The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga+) implantation at room temperature. Our results show that Ga+ implantation enhances electrical conductivity by one order of magnitude from 1.01 × 10 3 Ω-1m-1 to 1.46 × 104 Ω-1m-1 and reduces its thermal conductivity by one order of magnitude from 12.7 Wm-1K-1 to 1.22 Wm -1K-1 for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga+ implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga + point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than diameter reduction in improving thermoelectric performance. © 2014 Author(s).
Keywords
Electric conductivity, Ion implantation, Nanowires, Thermoelectricity, Zinc oxide, Diameter reduction, Electrical conductivity, Point scattering, Room temperature, Theoretical simulation, Thermoelectric performance, Transverse acoustic phonons, Zinc oxide (ZnO), Thermal conductivity
Source Title
AIP Advances
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Date
2014
DOI
10.1063/1.4880240
Type
Article