Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors
Nurbawono, A. Zhang, A. Cai, Y. Wu, Y. Feng, Y.P. Zhang, C.
Nurbawono, A.
Citations
Altmetric:
Alternative Title
Abstract
Schottky barriers formed at carbon nanotube (CNT)-metal contacts have been well known to be crucial for the performance of CNT based field effect transistors (FETs). Through first principles calculations we show that a nanowelding process can drastically reduce the Schottky barriers at CNT-metal interfaces, resulting in significantly improved conductivity of CNT-based FETs. The proposed nanowelding can be realized by either laser local heating or a heating process via a controllable pulse current. Results presented in this paper may have great implications in future design and applications of CNT-based electronics. © 2012 American Institute of Physics.
Keywords
Source Title
Journal of Chemical Physics
Publisher
Series/Report No.
Collections
Rights
Date
2012-05-07
DOI
10.1063/1.4711082
Type
Article