Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers
Kim, S.-J. Cho, B.J. Yu, M.B. Li, M.-F. Xiong, Y.-Z. Zhu, C. Chin, A. Kwong, D.-L.
Yu, M.B.
Xiong, Y.-Z.
Kwong, D.-L.
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Alternative Title
Abstract
A high capacitance density (Cdensity) metal-insulator-metal MIM) capacitor with niobium pentoxide (Nb2O5) whose κ value is higher than 40, is developed for integrated RF bypass or decoupling capacitor application. Nb2O5 MIM with HfO2/Al2O3 barriers delivers a high Cdensity of > 17 fF/μm2 with excellent RF properties, while maintaining comparable leakage current and reliability properties with other high-κ dielectrics. The capacitance from the dielectric is shown to be stable up to 20 GHz, and resonant frequency of 4.2 GHz and Q of 50 (at 1 GHz) is demonstrated when the capacitor is integrated using Cu-BEOL process. © 2005 IEEE.
Keywords
Bypass capacitor, Decoupling capacitor, High-κ dielectric, Metal-insulator-metal (MIM) capacitor, Niobium oxide (Nb2O5), Radio frequency integrated circuit (RF IC)
Source Title
IEEE Electron Device Letters
Publisher
Series/Report No.
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Date
2005-09
DOI
10.1109/LED.2005.854378
Type
Article