Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates
Xu, S.J. Chua, S.J. Zhang, X. Zhang, Z.H. Luo, C.P. Yuan, Z.L. Xu, Z.Y. Zhou, J.M.
Luo, C.P.
Yuan, Z.L.
Xu, Z.Y.
Zhou, J.M.
Citations
Altmetric:
Alternative Title
Abstract
Low-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated. The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE). The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.
Keywords
Photoluminescent materials/devices, Quantum wells, Semiconductor heterojunctions, Semiconductor lasers, Semiconductor measurements
Source Title
IEEE Journal on Selected Topics in Quantum Electronics
Publisher
Series/Report No.
Collections
Rights
Date
1997-04
DOI
10.1109/2944.605695
Type
Article