A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs
Huang, D. Liu, W.J. Liu, Z.Y. Liao, C.C. Zhang, L.-F. Gan, Z. Wong, W. Li, M.-F.
Huang, D.
Liu, W.J.
Liu, Z.Y.
Liao, C.C.
Zhang, L.-F.
Gan, Z.
Wong, W.
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Abstract
A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (∼ tn of interface-trap generation is observed. The index n is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics. © 2009 IEEE.
Keywords
Charge pumping (CP), Interface traps, MOSFETs, Negative-bias temperature instability (NBTI), Reaction-diffusion model
Source Title
IEEE Transactions on Electron Devices
Publisher
Series/Report No.
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Date
2009
DOI
10.1109/TED.2008.2010585
Type
Article