Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy
Zmeck, M. Balk, L. Watt, F. Phang, J. Khambadkone, A. Niedernostheide, F.-J. Schulze, H.-J.
Zmeck, M.
Balk, L.
Niedernostheide, F.-J.
Schulze, H.-J.
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Abstract
In this paper the possible application of ion beam induced charge (IBIC)-microscopy for the analysis of the electrical field distributions within the depletion regions of high-power devices is discussed. The application of a reverse bias voltage allows one to obtain information about the field distribution within the device under working conditions from IBIC measurements. Such data are useful in the design process of high-power devices because excessive fields within protection elements (e.g. field ring structures) can be avoided. Charge collection spectra taken under reverse voltages of more than 1 kV are discussed. The results have been compared with simulations of the IBIC-processes using the code MEDICI. © 2003 Elsevier B.V. All rights reserved.
Keywords
Electrical field strength, High-power devices, IBIC
Source Title
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Series/Report No.
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Date
2003-09
DOI
10.1016/S0168-583X(03)01022-X
Type
Conference Paper