Energy-band alignments at LaAlO3 and Ge interfaces
Mi, Y.Y. Wang, S.J. Chai, J.W. Pan, J.S. Huan, A.C.H. Ning, M. Ong, C.K.
Mi, Y.Y.
Wang, S.J.
Chai, J.W.
Pan, J.S.
Huan, A.C.H.
Ning, M.
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Abstract
The energy-band alignments for LaAl O3 films on p-Ge (001) with and without Ge Ox Ny interfacial layer have been studied using photoemission spectroscopy. The valence-band offsets at LaAl O3 Ge Ox Ny Ge and LaAl O3 Ge interfaces were measured to be 2.70 and 3.06 eV, respectively. The effect of interfacial Ge Ox Ny layer on the band alignments is attributed to the modification of interface dipoles. The conduction-band offsets at LaAl O3 Si (001) and LaAl O3 Ge interfaces are found to have the same value of 2.25±0.05 eV, where the shift of valence-band top accounts for the difference in the energy-band alignment at two interfaces. © 2006 American Institute of Physics.
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Applied Physics Letters
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Date
2006
DOI
10.1063/1.2387986
Type
Article