Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopy
Lee, P.S. Mangelinck, D. Pey, K.L. Ding, J. Osipowicz, T. Ho, C.S. Chen, G.L. Chan, L.
Lee, P.S.
Mangelinck, D.
Ho, C.S.
Chen, G.L.
Chan, L.
Citations
Altmetric:
Alternative Title
Abstract
The formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)Si on poly-Si lines with linewidths ranging from 0.5 μm to 0.25 μm has been monitored by a distinct Raman peak at around 215 cm-1. Ni(Pt)Si was clearly identified to be present up to a RTA temperature of 900°C on narrow poly-Si lines as compared to pure NiSi which was found only up to 750°C. Raman scattering from the 100×100 μm2 poly-Si pads showed the formation of NiSi2 at 750°C for pure Ni-salicidation and 900°C for Ni(Pt)-salicidation respectively. The difference in the stability of NiSi on the poly-Si pads and lines is discussed in terms of agglomeration, inversion and/or nucleation of NiSi2 that could be due to difference in nucleation sites and/or stress. In addition, a correlation between the line sheet resistance and the presence of Ni silicide was found using micro-Raman mapping along single poly-Si lines.
Keywords
Source Title
Materials Research Society Symposium - Proceedings
Publisher
Series/Report No.
Collections
Rights
Date
2000
DOI
Type
Conference Paper