On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2 O3
Hoex, B. Gielis, J.J.H. Van De Sanden, M.C.M. Kessels, W.M.M.
Gielis, J.J.H.
Van De Sanden, M.C.M.
Kessels, W.M.M.
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Abstract
Al2 O3 is a versatile high- κ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface passivation can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density Qf of up to 1013 cm-2 present in the Al2 O3 film at the interface with the underlying Si substrate. The negative polarity of Qf in Al2 O3 is especially beneficial for the passivation of p -type c-Si as the bulk minority carriers are shielded from the c-Si surface. As the level of field-effect passivation is shown to scale with Qf2, the high Qf in Al2 O3 tolerates a higher interface defect density on c-Si compared to alternative surface passivation schemes. © 2008 American Institute of Physics.
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Journal of Applied Physics
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Date
2008
DOI
10.1063/1.3021091
Type
Article