Tantalum-nitride antifuse electromechanical OTP for embedded memory applications
Singh, P. Li, C.G. Pitchappa, P. Lee, C.
Singh, P.
Li, C.G.
Pitchappa, P.
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Abstract
Embedded nonvolatile memory (NVM) integrated in the back-end of line processes are of high interest, particularly for rugged environments (high temperature/radiation or vibration). This letter demonstrates the use of tantalum nitride microbeams as antifuse one-time programmable (OTP) NVM. It needs a single mask process and can be integrated above an integrated circuit. Typical fusing current is 1 mA, operating voltage is 4 V, and the measured contact resistance is <2kΩ. A hybrid one-transistor/one microbeam/bit memory array is proposed for back-end compatible and low-cost OTP NVM integration. © 1980-2012 IEEE.
Keywords
Embedded memory, nanoelectro-mechanical systems (NEMS), nonvolatile memory (NVM), one-time programmable (OTP), tantalum nitride (TaN)
Source Title
IEEE Electron Device Letters
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Series/Report No.
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Date
2013
DOI
10.1109/LED.2013.2262918
Type
Article