Muhammed Juvaid Mangattuchali

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msemjm@nus.edu.sg


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COLLEGE OF DESIGN & ENG
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    Direct Growth of Wafer-Scale, Transparent, p‑Type Reduced-Graphene-Oxide-like Thin Films by Pulsed Laser Deposition
    (American Chemical Society, 2020-02-26) M. M. Juvaid; Soumya Sarkar; Pranjal Kumar Gogoi; Siddhartha Ghosh; Meenakshi Annamalai; Yung-Chang Lin; Saurav Prakash; Sreetosh Goswami; Changjian Li; Sonu Hooda; Hariom Jani; Mark B. H. Breese; Andrivo Rusydi; Stephen John Pennycook; Kazu Suenaga; M. S. Ramachandra Rao; Thirumalai Venkatesan; ELECTRICAL AND COMPUTER ENGINEERING; PHYSICS; MATERIALS SCIENCE AND ENGINEERING; NUS NANOSCIENCE & NANOTECH INITIATIVE
    Reduced graphene oxide (rGO) has attracted significant interest in an array of applications ranging from flexible optoelectronics, energy storage, sensing, and very recently as membranes for water purification. Many of these applications require a reproducible, scalable process for the growth of large-area films of high optical and electronic quality. In this work, we report a one-step scalable method for the growth of reduced-graphene-oxide-like (rGO-like) thin films via pulsed laser deposition (PLD) of sp2 carbon in an oxidizing environment. By deploying an appropriate laser beam scanning technique, we are able to deposit wafer-scale uniform rGO-like thin films with ultrasmooth surfaces (roughness <1 nm). Further, in situ control of the growth environment during the PLD process allows us to tailor its hybrid sp2–sp3 electronic structure. This enables us to control its intrinsic optoelectronic properties and helps us achieve some of the lowest extinction coefficients and refractive index values (0.358 and 1.715, respectively, at 2.236 eV) as compared to chemically grown rGO films. Additionally, the transparency and conductivity metrics of our PLD grown thin films are superior to other p-type rGO films and conducting oxides. Unlike chemical methods, our growth technique is devoid of catalysts and is carried out at lower process temperatures. This would enable the integration of these thin films with a wide range of material heterostructures via direct growth.
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    Tunable and enhanced Rashba spin-orbit coupling in iridate-manganite heterostructures
    (American Physical Society, 2020-09-25) T. S. Suraj; Ganesh Ji Omar; Hariom Jani; M. M. Juvaid; Sonu Hooda; Anindita Chaudhuri; Andrivo Rusydi; K. Sethupathi; Thirumalai Venkatesan; Ariando Ariando; M. S. Ramachandra Rao; ELECTRICAL AND COMPUTER ENGINEERING; PHYSICS; NUS NANOSCIENCE & NANOTECH INITIATIVE
    Tailoring spin-orbit interactions and Coulomb repulsion are the key features to observe exotic physical phenomena such as magnetic anisotropy and topological spin texture at oxide interfaces. Our study proposes a platform for engineering magnetism and spin-orbit coupling at theÿLaMnO3/SrIrO3ÿ(3d?5d)ÿoxide interface by tuning theÿLaMnO3ÿgrowth conditions, which controls the lattice displacement and spin-correlated interfacial coupling through charge transfer. We report a tunable and enhanced interface-induced Rashba spin-orbit coupling where the spin relaxation mechanism varies with magnetic behavior of the underlyingÿLaMnO3ÿlayer. The x-ray spectroscopy measurements reveal the quantitative valence states of Mn and their impact on charge transfer. Our angle-dependent magnetoresistance measurements also reflects the signature of magnetic proximity effect inÿSrIrO3ÿand can be tuned with the magnetic nature ofÿLaMnO3ÿin aÿLaMnO3/SrIrO3ÿbilayer. Our work demonstrates a route to engineer the interface-induced Rashba spin-orbit coupling and magnetic proximity effect at theÿ3d?5dÿoxide interface for spintronics applications.