Usman Younis
Email Address
eleuy@nus.edu.sg
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Publication Towards low-loss waveguides in SOI and Ge-on-SOI for mid-IR sensing(Institute of Physics Publishing, 2018-04-25) Younis, Usman; Luo, Xianshu; Dong, Bowei; Huang, Li; Vanga, Sudheer K.; Lim, Andy Eu-Jin; Lo, Patrick Guo-Qiang; Lee, Chengkuo; Bettiol, Andrew A.; Ang, Kah-Wee; ELECTRICAL AND COMPUTER ENGINEERING; PHYSICSSilicon-on-insulator is an attractive choice for developing mid-infrared photonic integrated circuits. It benefits from mature fabrication technologies and integration with on-chip electronics. We report the development of SOI channel and rib waveguides for mid-infrared wavelengths centered at 3.7 ?m. Propagation loss of ~1.44 dB/cm and ~1.2 dB/cm has been measured for TE and TM polarizations in channel waveguides, respectively. Similarly, propagation loss of ~1.39 dB/cm and ~2.82 dB/cm has been measured for TE and TM polarized light in rib waveguides. The propagation loss is consistent with the measurements obtained using a different characterization setup and for the same waveguide structures on a different chip. Given the tightly confined single-mode in our 400 nm thick Si core, this propagation loss is among the lowest losses reported in literature. We also report the development of Ge-on-SOI strip waveguides for mid-infrared wavelengths centered at 3.7 ?m. Minimum propagation loss of ~8dB/cm has been measured which commensurate with that required for high power mid-infrared sensing. Ge-on-SOI waveguides provide an opportunity to realize monolithically integrated circuit with on-chip light source and photodetector. © 2018 The Author(s). Published by IOP Publishing Ltd.