Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
 
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Results 101-120 of 421 (Search time: 0.011 seconds).

Issue DateTitleAuthor(s)
1012009Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon filmsLim, P.S.Y.; Lee, R.T.P. ; Sinha, M.; Chi, D.Z.; Yeo, Y.-C. 
2Jul-1998Effect of the (1010) crystal orientation on the optical gain of wurtzite GaN-AlGaN quantum-well lasersYeo, Y.C. ; Chong, T.C. ; Li, M.F. 
31-Oct-2010Effective method for preparation of oxide-free Ge2Sb 2Te5 surface: An X-ray photoelectron spectroscopy studyZhang, Z.; Pan, J.; Foo, Y.L.; Fang, L.W.-W.; Yeo, Y.-C. ; Zhao, R.; Shi, L.; Chong, T.-C. 
42009Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3SiO2 dielectric stackYang, J.-J.; Chen, J.-D. ; Wise, R.; Steinmann, P.; Yu, M.-B.; Kwong, D.-L.; Li, M.-F.; Yeo, Y.-C. ; Zhu, C. 
5Dec-2007Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contactsWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
625-Apr-2008Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reductionLim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
72006Effects of annealing and temperature on SGOI fabrication using Ge condensationBalakumar, S.; Ong, C.S.; Tung, C.H.; Trigg, A.; Li, M.F.; Kumar, R.; Lo, G.Q.; Balasubramanian, N.; Yeo, Y.C. ; Kwong, D.L.
8Oct-2007Electrical characteristics of memory devices with a high-k HfO2 trapping layer and dual SiO2/Si3 N4 tunneling layerWang, Y.Q.; Hwang, W.S.; Zhang, G.; Samudra, G. ; Yeo, Y.-C. ; Yoo, W.J.
920-Sep-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T.; Li, M.F. ; Shen, C.; Yeo, Y.-C. ; Hou, Y.T. ; Zhu, C. ; Chin, A.; Kwong, D.L.
1015-Nov-2012Electronic band structure and effective mass parameters of Ge 1-xSnx alloysLu Low, K.; Yang, Y.; Han, G. ; Fan, W.; Yeo, Y.-C. 
112012Electronic band structure and effective masses of Ge1-xSn x alloysLow, K.L.; Yang, Y.; Han, G. ; Fan, W.; Yeo, Y.-C. 
12Mar-1998Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-XN quantum-well lasersYeo, Y.C. ; Chong, T.C. ; Li, M.-F. ; Fan, W.J.
1318-Jan-2006Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wellFan, W.J.; Abiyasa, A.P.; Tan, S.T.; Yu, S.F.; Sun, X.W.; Xia, J.B.; Yeo, Y.C. ; Li, M.F. ; Chong, T.C. 
14Apr-2011Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbonLam, K.-T.; Yang, Y.; Samudra, G.S. ; Yeo, Y.-C. ; Liang, G. 
152012Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)Subramanian, S.; Ivana; Yeo, Y.-C. 
162012Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materialsWang, W.; Loke, D.; Shi, L.; Zhao, R.; Yang, H.; Law, L.-T.; Ng, L.-T.; Lim, K.-G.; Yeo, Y.-C. ; Chong, T.-C.; Lacaita, A.L.
172012Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilitiesWang, W.J.; Loke, D.; Law, L.T.; Shi, L.P.; Zhao, R.; Li, M.H.; Chen, L.L.; Yang, H.X.; Yeo, Y.C. ; Adeyeye, A.O. ; Chong, T.C.; Lacaita, A.L.
182007Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressorsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
192004Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regionsAng, K.W.; Chui, K.J.; Bliznetsov, V.; Du, A.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C. 
202007Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)Ang, K.-W.; Wong, H.-S.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C.