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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

Results 61-80 of 100 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
611987Observation of a high-resistance to a low-resistance transition in a silicon bicrystalLing, C.H. 
62Jul-1991Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurementYeow, Y.T.; Ling, C.H. ; Ah, L.K.
63Jul-1991Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurementYeow, Y.T.; Ling, C.H. ; Ah, L.K.
64Nov-1989Observation of zero temperature coefficient of capacitance in the MOS capacitorLing, C.H. 
65Nov-1989Observation of zero temperature coefficient of capacitance in the MOS capacitorLing, C.H. 
662001On the dominant interface trap generation process during hot-carrier stressingAng, D.S. ; Ling, C.H. 
67Sep-1999On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stressAng, D.S. ; Ling, C.H. 
681985Quasi-Fermi level variation in the space-charge region of a grain boundaryLing, C.H. ; Kwok, C.Y.; Tay, T.M.
691-Jan-1985QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.Ling, C.H. ; Kwok, C.Y.; Tay, T.M.
7010-Aug-1993Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/SiSundaram, K.; Choi, W.K. ; Ling, C.H. 
711-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
721-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
731999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
741999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
751995Recombination lifetime in silicon from laser microwave photoconductance decay measurementLing, C.H. ; Teoh, H.K.; Choi, W.K. ; Zhou, T.Q. ; Ah, L.K.
761995Recombination lifetime in silicon from laser microwave photoconductance decay measurementLing, C.H. ; Teoh, H.K.; Choi, W.K. ; Zhou, T.Q. ; Ah, L.K.
772000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
78May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
79May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
80Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.