Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
 
 
Email
eleling@nus.edu.sg
 

Publications

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Type:  Conference Paper

Results 1-12 of 12 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
11997Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitorsOoi, J.A.; Ling, C.H. 
21997Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET'sGoh, Y.H.; Ah, L.K.; Ling, C.H. 
31997Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurementsGoh, Y.H.; Ling, C.H. 
41997Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurementsGoh, Y.H.; Ling, C.H. 
52000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
62000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
71989New multiple-function logic familyTan, Y.K.; Lim, Y.C. ; Kwok, C.Y.; Ling, C.H. 
81989New multiple-function logic familyTan, Y.K.; Lim, Y.C. ; Kwok, C.Y.; Ling, C.H. 
92001On the dominant interface trap generation process during hot-carrier stressingAng, D.S. ; Ling, C.H. 
101999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
111999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
122005STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technologyPhua, W.H.T.; Ang, D.S.; Ling, C.H. ; Chui, K.J.