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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]

Results 1-20 of 28 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
1Dec-2002A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessmentLiao, H.; Ang, D.S. ; Ling, C.H. 
2Sep-2003A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFETAng, D.S.; Ling, C.H. 
32000A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFETCheng, Z.Y. ; Ling, C.H. 
4Nov-2008A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFETZhang, G.; Yoo, W.J.; Ling, C.H. 
5Dec-2000Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide filmsAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
62000Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiationLing, C.H. ; Ang, C.H.; Ang, D.S. 
7Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
81-Jul-2000Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradationCho, B.J. ; Kim, S.J. ; Ling, C.H. ; Joo, M.-S.; Yeo, I.-S.
92000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
10Dec-2004Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFETAng, D.S.; Liao, H.; Phua, T.W.H.; Ling, C.H. 
11Dec-2005Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFETAng, D.S.; Wang, S.; Ling, C.H. 
12Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
13Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
14Nov-2001Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear regionAng, D.S. ; Lun, Z. ; Ling, C.H. 
15Dec-2003Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and ModelingAng, D.S.; Lun, Z. ; Ling, C.H. 
16Jul-2003High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFETAng, D.S.; Phua, T.W.H.; Liao, H.; Ling, C.H. 
17Jun-2008Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layerZhang, G.; Yoo, W.J.; Ling, C.-H. 
182000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
192000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
20Jun-2004Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETsAng, D.S.; Liao, H.; Ling, C.H.