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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [1905 TO 1999]

Results 1-20 of 72 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
11998A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETsAng, D.S. ; Ling, C.H. 
2Jul-1984A diffusion model for carrier transport in a polycrystalline filmLing, C.H. 
315-May-1998A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiationCheng, Z.Y. ; Ling, C.H. 
41999A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 KLing, C.H. ; See, L.K.
5Jun-1997A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurementAng, D.S. ; Ling, C.H. 
6Mar-1999A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET'sAng, D.S. ; Ling, C.H. 
7Jan-1998A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET'sAng, D.S. ; Ling, C.H. 
81998A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET'sAng, D.S. ; Ling, C.H. 
91-Dec-1997An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurementsLing, C.H. ; Cheng, Z.Y. 
101994Analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide filmsChoi, W.K. ; Ling, C.H. 
111992Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafersLing, C.H. ; Tay, T.M.
12Nov-1992Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurementsLing, C.H. ; Yeow, Y.T.; Ah, L.K.
13May-1992Characterization of rf-sputtered yttrium oxide filmsLing, C. ; Bhaskaran, J.; Choi, W. 
141998Charge trapping in interpoly ONO filmLira, K.S.; Ling, C.H. 
151997Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET'sLing, C.H. 
161997Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitorsOoi, J.A.; Ling, C.H. 
17Jul-1985COMPUTATION OF ELECTRON AND HOLE QUASI-FERMI LEVELS IN POLYCRYSTALLINE SILICON FILMS UNDER UNIFORM ILLUMINATION AND ZERO BIAS.Ling, Chung Ho 
181997Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET'sGoh, Y.H.; Ah, L.K.; Ling, C.H. 
19May-1996Determination of LDD MOSFET drain resistance from device simulationSamudra, G.S. ; Seah, B.P.; Ling, C.H. 
20Sep-1985EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.Ling, C.H. ; Kwok, C.Y.; Prasad, K.