Ling Chung Ho

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Full Name

Ling Chung Ho

(not current staff)

Variants

Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

eleling@nus.edu.sg

Refined By:

Type: Article

Author: Kwok, C.Y.

Department: ELECTRICAL ENGINEERING

Department: ELECTRICAL AND COMPUTER ENGINEERING

Results 1-8 of 8 (Search time: 0.003 seconds).

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	Issue Date	Title	Author(s)
1	Sep-1985	EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.	Ling, C.H. ; Kwok, C.Y.; Prasad, K.
2	Jul-1985	Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation	Ling, C.H. ; Kwok, C.Y.
3	Sep-1986	Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures	Ling, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
4	1985	Quasi-Fermi level variation in the space-charge region of a grain boundary	Ling, C.H. ; Kwok, C.Y.; Tay, T.M.
5	1-Jan-1985	QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.	Ling, C.H. ; Kwok, C.Y.; Tay, T.M.
6	May-1985	RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.	Ling, C.H. ; Kwok, C.Y.; Prasad; K.
7	Mar-1987	Relaxation of trapped charge at silicon grain boundary states	Ling, C.H. ; Kwok, C.Y.; Woo, P.K.
8	Oct-1986	SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.	Ling, C.H. ; Kwok, C.Y.; Prasad, K.