Full Name
Cai Yongqing
(not current staff)
Variants
Cai, Yongqing
Cai, Y.Q.
Cai, Y.-Q.
Cai, Y.
 
Main Affiliation
 
Faculty
 
Email
phycy@nus.edu.sg
 

Publications

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Type:  Article

Results 1-20 of 27 (Search time: 0.012 seconds).

Issue DateTitleAuthor(s)
127-May-2011Adsorbate and defect effects on electronic and transport properties of gold nanotubesCai, Y. ; Zhou, M. ; Zeng, M. ; Zhang, C. ; Feng, Y.P. 
223-Sep-2011Adsorption of gas molecules on transition metal embedded graphene: A search for high-performance graphene-based catalysts and gas sensorsZhou, M.; Lu, Y.-H. ; Cai, Y.-Q. ; Zhang, C. ; Feng, Y.-P. 
33-Jan-2017Al-Doped Black Phosphorus p-n Homojunction Diode for High Performance PhotovoltaicLiu, Yuanda ; Cai, Yongqing ; Zhang, Gang ; Zhang, Yong-Wei ; Ang, Kah-Wee 
418-May-2018Black Phosphorus Carbide as a Tunable Anisotropic Plasmonic MetasurfaceHuang, Xin ; Cai, Yongqing ; Feng, Xuewei ; Tan, Wee Chong ; Hasan, Dihan Md. Nuruddin ; Chen, Li ; Chen, Nan ; Wang, Lin ; Huang, Li ; Duffin, Thorin Jake ; Nijhuis, Christian A. ; Zhang, Yong-Wei ; Lee, Chengkuo ; Ang, Kah-Wee 
519-Sep-2011Dielectric properties and lattice dynamics of α-PbO2-type TiO2: The role of soft phonon modes in pressure-induced phase transition to baddeleyite-type TiO2Cai, Y. ; Zhang, C. ; Feng, Y.P. 
6Aug-2012Effect of interfacial strain on spin injection and spin polarization of Co 2CrAl/NaNbO 3/Co 2CrAl magnetic tunneling junctionCai, Y. ; Bai, Z.; Yang, M. ; Feng, Y.P. 
72009Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineeringLu, Y.H. ; Wu, R.Q. ; Shen, L. ; Yang, M. ; Sha, Z.D.; Cai, Y.Q. ; He, P.M.; Feng, Y.P. 
82009Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effectsYang, M. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Wang, S.J.
97-May-2012First principles study of Bismuth alloying effects in GaAs saturable absorberLi, D.; Yang, M. ; Zhao, S.; Cai, Y. ; Feng, Y. 
1012-Mar-2012First principles study of the ternary complex model of EL2 defect in GaAs saturable absorberLi, D.; Yang, M. ; Cai, Y. ; Zhao, S.; Feng, Y. 
11Oct-2012First-principles study of the effect of Bi Ga heteroantisites in GaAs:Bi alloyLi, D.; Yang, M. ; Zhao, S.; Cai, Y. ; Lu, Y. ; Bai, Z.; Feng, Y. 
122009Glass forming abilities of binary Cu100-x Zrx (34, 35.5, and 38.2 at. %) metallic glasses: A LAMMPS studySha, Z.D.; Wu, R.Q. ; Lu, Y.H. ; Shen, L. ; Yang, M. ; Cai, Y.Q. ; Feng, Y.P. ; Li, Y. 
1315-Apr-2013High-performance giant-magnetoresistance junctions based on the all-Heusler architecture with matched energy bands and Fermi surfacesBai, Z.; Cai, Y. ; Shen, L. ; Han, G.; Feng, Y. 
149-Jan-2012Magnetic and transport properties of Mn 3-xGa/MgO/Mn 3-xGa magnetic tunnel junctions: A first-principles studyBai, Z.; Cai, Y. ; Shen, L. ; Yang, M. ; Ko, V.; Han, G.; Feng, Y. 
152014Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctionsBai Z. ; Shen L. ; Cai Y. ; Wu Q.; Zeng M. ; Han G. ; Feng Y.P. 
16Sep-2013Mechanical behavior of Cu-Zr bulk metallic glasses (BMGs): A molecular dynamics approachImran, M.; Hussain, F.; Rashid, M.; Cai, Y. ; Ahmad, S.A.
172014Microstructural evolution of charged defects in the fatigue process of polycrystalline BiFeO3 thin filmsKe, Qingqing ; Kumar, Amit; Lou, Xiaojie; Feng, Yuan Ping ; Zeng, Kaiyang ; Cai, Yongqing ; Wang, John 
184-Apr-2011Mn-doped thiolated Au25 nanoclusters: Atomic configuration, magnetic properties, and a possible high-performance spin filterZhou, M. ; Cai, Y.Q. ; Zeng, M.G. ; Zhang, C. ; Feng, Y.P. 
197-May-2012Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistorsNurbawono, A.; Zhang, A. ; Cai, Y. ; Wu, Y. ; Feng, Y.P. ; Zhang, C. 
202013NIR schottky photodetectors based on individual single-crystalline GeSe nanosheetMukherjee, B.; Cai, Y. ; Tan, H.R.; Feng, Y.P. ; Tok, E.S. ; Sow, C.H.