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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

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Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 1-20 of 96 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
11-Oct-1997A cleaning model for removal of particles due to laser-induced thermal expansion of substrate surfaceLu, Y.-F. ; Song, W.-D. ; Ye, K.-D. ; Lee, Y.-P.; Chan, D.S.H. ; Low, T.-S. 
2Aug-2004A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gateRen, C.; Yu, H.Y. ; Kang, J.F.; Wang, X.P.; Ma, H.H.H. ; Yeo, Y.-C. ; Chan, D.S.H. ; Li, M.-F. ; Kwong, D.-L.
328-Apr-2006A dynamic random access memory based on a conjugated copolymer containing electron-donor and -acceptor moietiesLing, Q.-D. ; Song, Y.; Lim, S.-L.; Teo, E.Y.-H. ; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
4Aug-2007A flexible polymer memory deviceLi, L. ; Ling, Q.-D. ; Lim, S.-L.; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
52005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
62004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
7Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
81997A theoretical model for laser removal of particles from solid surfacesLu, Y.F. ; Song, W.D. ; Ang, B.W.; Hong, M.H. ; Chan, D.S.H. ; Low, T.S. 
92006A WORM-type memory device with rectifying effect based on a conjugated copolymer of PF6Eu on Si substrateTan, Y.P.; Ling, Q.D. ; Teo Eric, Y.H.; Song, Y.; Lim, S.L.; Lo Patrick, G.Q.; Kang, E.T. ; Zhu, C. ; Chan, D.S.H. 
101-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
11Jun-1993An energy dependent model for type I magnetic contrast in the scanning electron microscopeChim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Low, T.S. ; Thirumalai, S.
122009An organic-based diode-memory device with rectifying property for crossbar memory array applicationsTeo, E.Y.H. ; Zhang, C. ; Lim, S.L.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
131998Automatic control and real-time monitoring of laser cleaning and laser ablationLu, Y.F. ; Meng, M.; Hong, M.H. ; Low, T.S. ; Chan, D.S.H. 
142006Bi-stable state for WORM application based on carbazole-containing polymerTeo, E.Y.H. ; Ling, Q. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
152008Bilayer memory device based on a conjugated copolymer and a carbon nanotube/polyaniline compositeLi, L. ; Ling, Q.-D. ; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
1630-Nov-2006Bistable electrical switching and memory effects in a thin film of copolymer containing electron donor-acceptor moieties and europium complexesLing, Q.-D. ; Wang, W.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
172008Bistable electrical switching and rewritable memory effect in a thin film acrylate copolymer containing carbazole-oxadiazole donor-acceptor pendant groupsTeo, E.Y.H. ; Ling, Q.D.; Lim, S.L.; Neoh, K.G.; Kang, E.T.; Chan, D.S.H. ; Zhu, C.X. 
182007Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube compositesLiu, G. ; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Chang, F.-C.; Zhu, C.-X. ; Chan, D.S.-H. 
192005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.
20Jan-1999Carbon nitride thin films deposited by nitrogen-ion-assisted KRF excimer ablation of graphiteFeng, L.Y. ; Min, R.Z.; Qiao, N.H.; Feng, H.Z.; Chan, D.S.H. ; Seng, L.T. ; Yin, C.S.; Gamani, K. ; Geng, C. ; Kun, L.