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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Author:  Chan, D.S.H.
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 121-127 of 127 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1212009Volatile electrical switching in a functional polyimide containing electron-donor and -acceptor moietiesLiu, Y.-L.; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Wang, K.-L.; Liou, W.-T.; Zhu, C.-X. ; Chan, D.S.-H. 
1222010Wide memory window in graphene oxide charge storage nodesWang, S. ; Pu, J. ; Chan, D.S.H. ; Cho, B.J.; Loh, K.P. 
123Aug-2006Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applicationsRen, C.; Chan, D.S.H. ; Li, M.-F. ; Loh, W.-Y.; Balakumar, S.; Tung, C.H.; Balasubramanian, N.; Kwong, D.-L.
12410-May-2006Work function tuning of metal nitride electrodes for advanced CMOS devicesRen, C.; Faizhal, B.B.; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Balasubramanian, N.; Kwong, D.-L.
1252006Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS processRen, C.; Chan, D.S.H. ; Loh, W.Y.; Balakumar, S.; Du, A.Y.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.
1262008WORM-type device with rectifying effect based on a conjugated copolymer of fluorene and europium complexTan, Y.P.; Song, Y.; Teo, E.Y.H. ; Ling, Q.D. ; Lim, S.L.; Lo, P.G.Q.; Chan, D.S.H. ; Kang, E.T. ; Zhu, C. 
127Aug-2006WORM-type memory device based on a conjugated copolymer containing europium complex in the main chainLing, Q.-D. ; Song, Y.; Teo, E.Y.H. ; Lim, S.-L.; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G.