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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]

Results 41-60 of 132 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
412008Effects of volatility of etch by-products on surface roughness during etching of metal gates in Cl2Hwang, W.S.; Cho, B.-J. ; Chan, D.S.H. ; Lee, S.W.; Yoo, W.J.
422008Efficient multilayer organic solar cells using the optical interference peakZhang, C. ; Tong, S.W. ; Jiang, C.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
4328-Jul-2009Electrical conductance tuning and bistable switching in poly(N-vinylcarbazole)-Carbon nanotube composite filmsLiu, G.; Ling, Q.-D.; Teo, E.Y.H. ; Zhu, C.-X. ; Chan, D.S.-H. ; Neoh, K.-G.; Kang, E.-T.
4Feb-2007Electrically bistable thin-film device based on PVK and GNPs polymer materialSong, Y.; Ling, Q.D. ; Lim, S.L.; Teo, E.Y.H. ; Tan, Y.P.; Li, L.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
52009Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cellsZhang, C. ; Tong, S.W. ; Zhu, C. ; Jiang, C.; Kang, E.T. ; Chan, D.S.H. 
62009Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)Teo, E.Y.H. ; Zhang, C. ; Lim, S.L.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
7Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
8May-2004Fermi pinning-induced thermal instability of metal-gate work functionsYu, H.Y. ; Ren, C.; Yeo, Y.-C. ; Kang, J.F. ; Wang, X.P.; Ma, H.H.H. ; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
9Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
10Jul-2007Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum wellJiang, Y.; Loh, W.Y.; Chan, D.S.H. ; Xiong, Y.Z.; Ren, C.; Lim, Y.F.; Lo, G.Q.; Kwong, D.-L.
11Oct-2003Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD processJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Chan, D.S.H. ; Whoang, S.J.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
12Jul-2003Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etchingChen, J. ; Tan, K.M.; Wu, N.; Yoo, W.J. ; Chan, D.S.H. 
1324-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
142004Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETsShen, C.; Yu, H.Y. ; Wang, X.P.; Li, M.-F. ; Yeo, Y.-C. ; Chan, D.S.H. ; Bera, K.L.; Kwong, D.L.
15Jun-2006Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivationWu, N.; Zhang, Q.; Chan, D.S.H. ; Balasubramanian, N.; Zhu, C. 
16Jun-2008Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation techniqueJiang, Y.; Singh, N.; Liow, T.Y.; Loh, W.Y.; Balakumar, S.; Hoe, K.M.; Tung, C.H.; Bliznetsov, V.; Rustagi, S.C.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
172000Global optimization for digital MOS circuits performanceChen, H.M.; Samudra, G.S. ; Chan, D.S.H. ; Ibrahim, Y. 
182003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
19Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
20Jan-2010High-performance MIM capacitors using HfLaO-based dielectricsZhang, L.; He, W. ; Chan, D.S.H. ; Cho, B.J.