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Huan Cheng Hon,Alfred

rp06875

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Full Name
Huan Cheng Hon,Alfred
(not current staff)
Variants
Huan, Cha
Huan, A.H.
Huan, C.H.A.
Huan, A.C.H.
Huan, C.H.
Huan, Alfred C.H.
Alfred, C.H.H.
Huan, C.-H.A.
Huan, A.
 
Main Affiliation
 
Faculty
 
Email
phyhuana@nus.edu.sg
 

Publications

Refined By:
Author:  Wee, A.T.S.

Results 1-20 of 69 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Oct-1999(2×1) Oxygen superstructure on Cu(210) surface studied by quantitative LEED analysis and STMTan, K.C.; Guo, Y.P. ; Wee, A.T.S. ; Huan, C.H.A. 
2Jan-1994A comparative study of the initial oxygen and water reactions on germanium and silicon using simsWee, A.T.S. ; Huan, C.H.A. ; Thong, P.S.P.; Tan, K.L. 
31-Jun-1997AES analysis of nitridation of Si(100) by 2-10 keV N+ 2 ion beamsPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
4Dec-1996AES analysis of silicon nitride formation by 10 keV N+ and N+ 2 ion implantationPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
51-Dec-1995An alternative method for determining the transmission function of secondary ion mass spectrometersLow, M.H.S.; Huan, C.H.A. ; Wee, A.T.S. ; Tan, K.L. 
6Jan-1994An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometryWee, A.T.S. ; Huan, C.H.A. ; Tan, K.L. ; Tan, R.S.K.
715-Mar-1996Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
815-Dec-1996Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardmentPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
921-Sep-1997ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
10Nov-1998Atomic force microscopy investigation of the O2 +-induced surface topography of InPPan, J.S. ; Tay, S.T.; Huan, C.H.A. ; Wee, A.T.S. 
11Apr-2004Atomic-scale structure of the fivefold surface of an AlPdMn quasicrystal: A quantitative x-ray photoelectron diffraction analysisZheng, J.-C. ; Huan, C.H.A. ; Wee, A.T.S. ; Van Hove, M.A.; Fadley, C.S.; Shi, F.J.; Rotenberg, E.; Barman, S.R.; Paggel, J.J.; Horn, K.; Ebert, Ph.; Urban, K.
12Jul-1998Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAsPan, J.S. ; Huan, C.H.A. ; Wee, A.T.S. ; Tan, H.S. ; Tan, K.L. 
13Oct-1999Determination of multilayer relaxations of the Cu(210) stepped surface by calculation of LEED intensitiesGuo, Y.P. ; Tan, K.C.; Wee, A.T.S. ; Huan, C.H.A. 
1411-Dec-2000Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrixJie, Y.X. ; Xiong, Y.N.; Wee, A.T.S. ; Huan, C.H.A. ; Ji, W. 
151999Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering methodZhang, K.; Zhu, F.; Huan, C.H.A. ; Wee, A.T.S. 
162000Effect of ITO carrier concentration on the performance of organic light-emitting diodesZhu, F.; Zhang, K.; Huan, C.H.A. ; Wee, A.T.S. ; Guenther, E.; Jin, C.S.
17May-2001Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profilingNg, C.M.; Wee, A.T.S. ; Huan, C.H.A. ; See, A.
181999Electronic properties of CsSnBr3: Studies by experiment and theoryZheng, J.-C. ; Huan, C.H.A. ; Wee, A.T.S. ; Kuok, M.H. 
191999Enhancement or reduction of catalytic dissolution reaction in chemically amplified resists by substrate contaminantsSoo, C.P.; Valiyaveettil, S. ; Huan, A. ; Wee, A. ; Ang, T.C.; Fan, M.H.; Bourdillon, A.J. ; Chan, L.H.
201993Gender differences in undergraduate physics examination performance and learning strategies in SingaporeWee, A.T.S. ; Baaquie, B.E. ; Huan, A.H.