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Han Yang,Saxena

rp06867

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Full Name
Han Yang,Saxena
Variants
Srinivasan Madapusi P.
Madapusi, S.
Srinivasan Malapusi P.
Srinivasan Madapusi
Srinivasan, M.P
Srinivasan, P.
Srinivasan, Madapusi P.
Srinivasan M.P.
Srinivasan, M.P.
Srinivasan, M.
 
Main Affiliation
 
Faculty
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Author:  Benistant, F.
Type:  Conference Paper

Results 1-11 of 11 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Jan-2004Analytical damage tables for crystalline siliconChan, H.Y.; Benistant, F.; Srinivasan, M.P. ; Erlebach, A.; Zechner, C.
25-Dec-2005Bimodal distribution of damage morphology generated by ion implantationMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
35-Dec-2005Comprehensive modeling of ion-implant amorphization in siliconMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
410-May-2006Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperatureChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Mok, K.R.; Chan, L.; Jin, H.M.
55-Dec-2005Ion-implant simulations: The effect of defect spatial correlation on damage accumulationMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
62006Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthMok, K.R.C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J.E.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.; Martin-Bragado, I.; Hamilton, J.J.
710-May-2006Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline siliconChan, H.Y.; Nordlund, K.; Gossmann, H.-J.L.; Harris, M.; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Srinivasan, M.P. ; Benistant, F.; Ng, C.M.; Chan, L.
82006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
92006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
10Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.
11Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.