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Han Yang,Saxena

rp06867

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Full Name
Han Yang,Saxena
Variants
Srinivasan Madapusi P.
Madapusi, S.
Srinivasan Malapusi P.
Srinivasan Madapusi
Srinivasan, M.P
Srinivasan, P.
Srinivasan, Madapusi P.
Srinivasan M.P.
Srinivasan, M.P.
Srinivasan, M.
 
Main Affiliation
 
Faculty
 

Publications

Refined By:
Author:  Benistant, F.
Department:  CHEMICAL & BIOMOLECULAR ENGINEERING
Date Issued:  2005

Results 1-7 of 7 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
15-Dec-2005Bimodal distribution of damage morphology generated by ion implantationMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
25-Dec-2005Comprehensive modeling of ion-implant amorphization in siliconMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
35-Dec-2005Ion-implant simulations: The effect of defect spatial correlation on damage accumulationMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
4Jul-2005Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulationsChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Jin, H.M.; Chan, L.
5Jul-2005Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulationsChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Jin, H.M.; Chan, L.
6Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.
7Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.