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Han Yang,Saxena

rp06867

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Full Name
Han Yang,Saxena
Variants
Srinivasan Madapusi P.
Madapusi, S.
Srinivasan Malapusi P.
Srinivasan Madapusi
Srinivasan, M.P
Srinivasan, P.
Srinivasan, Madapusi P.
Srinivasan M.P.
Srinivasan, M.P.
Srinivasan, M.
 
Main Affiliation
 
Faculty
 

Publications

Refined By:
Author:  Benistant, F.
Department:  CHEMICAL & BIOMOLECULAR ENGINEERING
Author:  Chan, H.Y.

Results 1-8 of 8 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
1Jan-2004Analytical damage tables for crystalline siliconChan, H.Y.; Benistant, F.; Srinivasan, M.P. ; Erlebach, A.; Zechner, C.
2Jan-2006Application of molecular dynamics for low-energy ion implantation in crystalline siliconChan, H.Y.; Srinivasan, M.P. ; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Gossmann, H.-J.L.; Harris, M.; Nordlund, K.; Benistant, F.; Ng, C.M.; Gui, D.; Chan, L.
310-May-2006Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperatureChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Mok, K.R.; Chan, L.; Jin, H.M.
410-May-2006Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline siliconChan, H.Y.; Nordlund, K.; Gossmann, H.-J.L.; Harris, M.; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Srinivasan, M.P. ; Benistant, F.; Ng, C.M.; Chan, L.
5Jul-2005Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulationsChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Jin, H.M.; Chan, L.
6Jul-2005Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulationsChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Jin, H.M.; Chan, L.
7Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.
8Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.