Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Refined By:
Author:  Teo, E.J.

Results 1-19 of 19 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
122-Jan-20032 MeV proton channeling contrast microscopy of LEO GaN thin film structuresOsipowicz, T. ; Teo, E.J. ; Bettiol, A.A. ; Watt, F. ; Hao, M.S.; Chua, S.J.
2Apr-2005An automatic beam focusing system for MeV protonsUdalagama, C.N.B. ; Bettiol, A.A. ; Van Kan, J.A. ; Teo, E.J. ; Breese, M.B.H. ; Osipowicz, T. ; Watt, F. 
3Jul-2001Channeling contrast microscopy on lateral epitaxial overgrown GaNTeo, E.J. ; Osipowicz, T. ; Bettiol, A.A. ; Watt, F. ; Hao, M.S.; Chua, S.J.
4Mar-2002Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVDHuang, Q.F.; Yoon, S.F.; Rusli; Zhang, Q.; Ahn, J.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
51-Aug-2004Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescenceTeo, E.J. ; Bettiol, A.A. ; Osipowicz, T. ; Hao, M.; Chua, S.J. ; Liu, Y.Y. 
6Jul-2002Deuterium-oxygen exchange on diamond (100)-A study by ERDA, RBS and TOF-SIMSLoh, K.P. ; Xie, X.N. ; Zhang, X. ; Teo, E.J. ; Osipowicz, T. ; Lai, M.Y.; Yakovlev, N.
7Jun-2001Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbideCui, J.; Rusli; Yoon, S.F.; Teo, E.J. ; Yu, M.B.; Chew, K.; Ahn, J.; Zhang, Q.; Osipowicz, T. ; Watt, F. 
8Aug-1999Effects of high energetic He+ ion irradiation on the structure of polymeric hydrogenated amorphous carbonZhang, Q.; Yoon, S.F.; Ahn, J.; Rusli; Yang, H.; Yang, C. ; Watt, F. ; Teo, E.J. ; Osipowice, T. 
91-Mar-2001Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor depositionCui, J.; Rusli, R.; Yoon, S.F.; Yu, M.B.; Chew, K.; Ahn, J.; Zhang, Q.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
103-Sep-2004Enhanced planar channeling of MeV protons through thin crystalsBreese, M.B.H. ; Rana, M.A.; Osipowicz, T. ; Teo, E.J. 
111-Apr-2002Gap state distribution in amorphous hydrogenated silicon carbide films deduced from photothermal deflection spectroscopyChew, K.; Rusli; Yoon, S.F.; Ahn, J.; Zhang, Q.; Ligatchev, V.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
122-Sep-1999Hydrogen 3D distribution in solids by ERDA imagingYang, C. ; Teo, E.J. ; Osipowicz, T. ; Watt, F. ; Jamieson, D.; Lee, K.K.; Tomcik, B. 
131-Sep-2002Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilutionChew, K.; Rusli; Yoon, S.F.; Ahn, J.; Ligatchev, V.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
14Sep-2000Investigation of molybdenum-carbon films (Mo-C:H) deposited using an electron cyclotron resonance chemical vapor deposition systemRusli; Yoon, S.F.; Huang, Q.F.; Yang, H.; Yu, M.B.; Ahn, J.; Zhang, Q.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
15Feb-2001Metal-containing amorphous carbon film development using electron cyclotron resonance CVDRusli, H.; Yoon, S.F.; Huang, Q.F.; Ahn, J.; Zhang, Q.; Yang, H.; Wu, Y.S.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
16May-2002Optimal geometry for GeSi/Si super-lattice structure RBS investigationWielunski, L.S.; Osipowicz, T. ; Teo, E.J. ; Watt, F. ; Tok, E.S. ; Zhang, J.
17Sep-2000Structural modification of polymeric amorphous hydrogenated carbon films induced by high energetic He+ irradiation and thermal annealingZhang, Q.; Yoon, S.F.; Ahn, J.; Rusli, X.; Yang, H.; Gan, B.; Yang, C. ; Watt, F. ; Teo, E.J. ; Osipowice, T. 
18May-2002Sub-micron channeling contrast microscopy on reactive ion etched deep Si microstructuresTeo, E.J. ; Alkaisi, M.; Bettiol, A.A. ; Osipowicz, T. ; Van Kan, J. ; Watt, F. ; Markwitz, A.
192003Yellow luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescenceTeo, E.J. ; Bettiol, A.A. ; Osipowicz, T. ; Hao, M.S.; Chua, S.J. ; Liu, Y.Y.