1. ScholarBank@NUS

Ramam, Akkipeddi

rp05480

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Ramam, Akkipeddi
Variants
Raman, A.
Ramam, A.
Akkipeddi, R.
AKKIPEDDI, RAMAM
 
Main Affiliation
 
Faculty
 

Publications

Results 1-20 of 22 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
128-Feb-2005Contact pressure measurement using silicon-based AlxGa 1-xAs semiconductor pressure sensorsTun, T.N.; Lok, T.S. ; Jui, T.C. ; Akkipeddi, R. ; Rahman, M. 
213-Jan-2005CONTACT PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAMEAKKIPEDDI, RAMAM ; SPERRING, CHRISTOPHER PHILIP; TOH, SIEW LOK ; TAY, CHO JUI ; RAHMAN, MUSTAFIZUR ; CHUA, SOO JIN 
331-Oct-2006Contact pressure sensor and method for manufacturing the sameAKKIPEDDI, RAMAM ; SPERRING, CHRISTOPHER P; TOH, SIEW LOK ; TAY, CHO JUI ; RAHMAN, MUSTAFIZUR ; CHUA, SOO JIN 
43-May-2006CONTACT PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAMEAKKIPEDDI, RAMAM ; SPERRING, CHRISTOPHER PHILIP; TOH, SIEW LOK ; TAY, CHO JUI ; RAHMAN, MUSTAFIZUR ; CHUA, SOO JIN 
5Feb-1994Distribution of photoresist over GaAs mesa structuresRamam, A. ; Chua, S.J. 
61996Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAsChua, S.J. ; Ramam, A. ; Lim, N. ; Gopalakrishnan, R. ; Tan, K.L. 
71995Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide systemChoi, W.K. ; Chan, Y.M.; Ah, L.K.; Loh, F.C. ; Tan, K.L. ; Ramam, A. 
82000Etching of GaN using Inductively Coupled PlasmaRamam, A. ; Chua, S.J. 
9Feb-1997Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysisAntoszewski, J.; Dell, J.M.; Faraone, L.; Tan, L.S. ; Raman, A. ; Chua, S.J. ; Holmes, D.S.; Lindemuth, J.R.; Meyer, J.R.
10May-1995Exploratory observations of effect of rapid thermal processing on silicon minority carrier lifetime using laser microwave photoconductance methodChoi, W.K. ; Ah, L.K.; Chan, Y.M.; Raman, A. 
11Mar-1998Features of InGaAlAs/InP heterostructuresRamam, A. ; Chua, S.J. 
12Mar-1998Features of InGaAlAs/InP heterostructuresRamam, A. ; Chua, S.J. 
13Jun-2000Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealingTan, L.S. ; Prakash, S. ; Ng, K.M.; Ramam, A. ; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
14Feb-1995Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxyFeng, Z.C. ; Chua, S.J. ; Raman, A. ; Williams, K.J.
152-Nov-1995Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxyRamam, A. ; Chua, S.J. ; Karunasiri, G. ; Vaya, P.R. 
16Apr-2000Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samplesRemashan, K.; Chua, S.J. ; Ramam, A. ; Prakash, S. ; Liu, W.
1715-Dec-1996Lattice vibrations in In1-x-yGaxAlxAs quaternary alloysRamam, A. ; Chua, S.J. 
18May-1997Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxyRamam, A. ; Chua, S.J. 
19May-1996Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substratesChua, S.J. ; Ramam, A. 
201997Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructuresChua, S.J. ; Ramam, A.