Full Name
Xiao Gong
Variants
Gong, X.
 
 
 
Email
elegong@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 3000]
Date Issued:  [2010 TO 2019]

Results 1-11 of 11 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
122-Apr-2019Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic ApplicationWang, Lin ; Liao, Wugang ; Wong, Swee Hang; Yu, Zhi Gen; Li, Sifan; Lim, Yee-Fun; Feng, Xuewei ; Tan, Wee Chong ; Huang, Xin ; Chen, Li; Liu, Liang ; Chen, Jingsheng ; Gong, Xiao ; Zhu, Chunxiang ; Liu, Xinke ; Zhang, Yong-Wei ; Chi, Dongzhi; Ang, Koh-Wee
215-Oct-2019Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structureSamanta, Subhranu ; Gong, Xiao ; Zhang, Panpan ; Han, Kaizhen ; Fong, Xuanyao 
315-Oct-2019Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structureSubhranu Samanta; Xiao Gong ; Panpan Zhang; Kaizhen Han ; Xuanyao Fong 
42017Digital etch technique for forming ultra-scaled germanium-tin (Ge 1-x Sn x) fin structureWang, W ; Lei, D ; Dong, Y ; Gong, X ; Tok, E.S ; Yeo, Y.-C 
52014Germanium-Tin on Si avalanche photodiode: Device design and technology demonstrationDong, Y.; Wang, W. ; Xu, X.; Gong, X. ; Lei, D.; Zhou, Q. ; Xu, Z.; Loke, W.K.; Yoon, S.-F.; Liang, G. ; Yeo, Y.-C. 
62016Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded bufferKohen, D; Nguyen, X.S; Yadav, S; Kumar, A ; Made, R.I; Heidelberger, C; Gong, X ; Lee, K.H; Lee, K.E.K; Yeo, Y.C ; Yoon, S.F ; Fitzgerald, E.A
72019High performance Ga2O3 metal-oxide-semiconductor field-effect transistors on an AlN/Si substrateLei, D. ; Han, K. ; Wu, Y. ; Liu, Z.; Gong, X. 
82018High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platformWang, W. ; Lei, D. ; Huang, Y.-C.; Lee, K.H.; Loke, W.-K.; Dong, Y. ; Xu, S. ; Tan, C.S.; Wang, H.; Yoon, S.-F.; Gong, X. ; Yeo, Y.-C. 
92019Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAMSamanta, Subhranu ; Zhang, Panpan ; Han, Kaizhen ; Gong, Xiao ; Chakraborty, Sandipan ; Li, Yida ; Fong, Xuanyao 
102018Strain relaxation of germanium-tin (GeSn) finsKang, Y; Huang, Y.-C; Lee, K.H; Bao, S; Wang, W ; Lei, D ; Masudy-Panah, S ; Dong, Y ; Wu, Y ; Xu, S ; Tan, C.S; Gong, X ; Yeo, Y.-C 
111-Mar-2019Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgOWang, Lin ; Liao, Wugang; Xu, Shengqiang ; Gong, Xiao ; Zhu, Chunxiang ; Ang, Kah-Wee