Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
 
 
Email
sletanls@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Date Issued:  [2010 TO 2020]

Results 1-14 of 14 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Apr-2013AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free processLiu, X.; Zhan, C.; Wai Chan, K.; Samuel Owen, M.H.; Liu, W.; Chi, D.Z.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
2Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
32012AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Teo, K.L. ; Chen, K.J.; Yeo, Y.-C. 
42010Asymmetrical magneto-impedance effect in NiFe/SiO2/Cu composite wire with a sputtered NiFe seed layerFan, J. ; Ning, N. ; Yi, J.B. ; Tan, L.S. ; Li, X.P. 
52015Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivationLiu, X.; Liu, Z. ; Pannirselvam, S. ; Pan, J.; Liu, W.; Jia, F.; Lu, Y.; Liu, C.; Yu, W.; He, J.; Tan, L.S. 
62010Diamond-like carbon (DLC) liner with highly compressive stress formed on algan/gan mos-hemts with in situ silane surface passivation for performance enhancementLiu, X.; Liu, B.; Low, E.K.F.; Chin, H.-C.; Liu, W.; Yang, M.; Tan, L.S. ; Yeo, Y.-C. 
72012Femtosecond laser machining of high permeability permalloyTan, L.S. ; Lee, K.S. ; Hui, M.H.; Li, X.P. 
8Jan-2010High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor depositionLiu, X.; Chin, H.-C.; Tan, L.S. ; Yeo, Y.-C. 
92013Hybrid plasmonic structures: Design and fabrication by laser meansXu, L.; Luo, F.F.; Tan, L.S. ; Luo, X.G.; Hong, M.H. 
1029-Aug-2011Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistorsLiu, X.; Kim Fong Low, E.; Pan, J.; Liu, W.; Leong Teo, K. ; Tan, L.-S. ; Yeo, Y.-C. 
11Jan-2011In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectricLiu, X.; Chin, H.-C.; Tan, L.-S. ; Yeo, Y.-C. 
12Jun-2010Large area parallel surface nanostructuring with laser irradiation through microlens arraysLim, C.S. ; Hong, M.H. ; Lin, Y. ; Tan, L.S. ; Kumar, A.S. ; Rahman, M. 
132-May-2011Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristicsLiu, X.; Liu, B.; Low, E.K.F.; Liu, W.; Yang, M.; Tan, L.-S. ; Teo, K.L. ; Yeo, Y.-C. 
14Aug-2010Pulsed laser annealing of ultra-shallow junctions in silicon-germaniumTan, L.S. ; Tan, J.Y.; Begum, A.; Hong, M.H. ; Du, A.Y.; Bhat, M.; Wang, X.C.